In situ determination of nitrogen content in InGaAsN quantum wells

In situ determination of nitrogen content in InGaAsN quantum wells

Title: In situ determination of nitrogen content in InGaAsN quantum wells

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Simultaneous determination of indium and nitrogen contents of InGaAsN quantum wells by optical in situ monitoring

Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth

Metal–organic vapor phase epitaxial growth of GaAsN quantum wells is monitored by in situ reflectance measurements. Correlation between the change in the reflectance intensity and nitrogen content of the quantum well is established. The reflectance as a function of time also reveals if there is deterioration of the crystalline quality during growth. This method together with X-ray diffraction a...

Characteristics of InGaAsN-GaAsSb type-II ‘‘W’’ quantum wells

InGaAsN-GaAsSb type-II ‘‘W’’ quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1 ySby and InGaAs1 xNx can be grown with compositions of y 1⁄4 0:3 and x 1⁄4 0:02. ‘‘W’’ structures with different N contents indicate that emission wavelengths in the 1.4–1.6 mm r...